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Critical thickness for InAs quantum dot formation on (311)B InP substrates

Identifieur interne : 005787 ( Main/Repository ); précédent : 005786; suivant : 005788

Critical thickness for InAs quantum dot formation on (311)B InP substrates

Auteurs : RBID : Pascal:09-0306361

Descripteurs français

Pascal (Inist)
- Valeur critique, Epaisseur couche, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, RHEED, Dépendance température, Structure cristalline, Mode empilement, Effet contrainte, Diffusion(transport), Phosphure d'indium, Epitaxie jet moléculaire, InAs, Substrat InP, InP, 6855J, 8107T, 8107, 6114H.

English descriptors

KwdEn :
- Critical value, Crystal structure, Diffusion, III-V compound, III-V semiconductors, Indium arsenides, Indium phosphide, Layer thickness, Molecular beam epitaxy, Nanostructured materials, Quantum dots, RHEED, Stacking sequence, Stress effects, Temperature dependence.

Abstract

We report on the critical thickness for InAs quantum dot (QD) formation on (311 )B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the critical thickness has been observed as a function of substrate temperature. We assume that is related to large As/P exchange on InP surface which leads to the formation of extra InAs on surface. Then, change of critical thickness during QD stacking has been investigated. When capping layers were grown continuously a large decrease of the critical thickness was observed as a function of the number of QD layers. In contrast, when capping layers were grown in two steps (double cap procedure) a nearly constant critical thickness was measured. We propose an explanation based on stress-driven mass transport and As/P exchange on InP surface to interpret such results.

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Le document en format XML

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<term>Composé III-V</term>
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<front><div type="abstract" xml:lang="en">We report on the critical thickness for InAs quantum dot (QD) formation on (311 )B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the critical thickness has been observed as a function of substrate temperature. We assume that is related to large As/P exchange on InP surface which leads to the formation of extra InAs on surface. Then, change of critical thickness during QD stacking has been investigated. When capping layers were grown continuously a large decrease of the critical thickness was observed as a function of the number of QD layers. In contrast, when capping layers were grown in two steps (double cap procedure) a nearly constant critical thickness was measured. We propose an explanation based on stress-driven mass transport and As/P exchange on InP surface to interpret such results.</div>
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<fC01 i1="01" l="ENG"><s0>We report on the critical thickness for InAs quantum dot (QD) formation on (311 )B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the critical thickness has been observed as a function of substrate temperature. We assume that is related to large As/P exchange on InP surface which leads to the formation of extra InAs on surface. Then, change of critical thickness during QD stacking has been investigated. When capping layers were grown continuously a large decrease of the critical thickness was observed as a function of the number of QD layers. In contrast, when capping layers were grown in two steps (double cap procedure) a nearly constant critical thickness was measured. We propose an explanation based on stress-driven mass transport and As/P exchange on InP surface to interpret such results.</s0>
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Critical thickness for InAs quantum dot formation on (311)B InP substrates

Critical thickness for InAs quantum dot formation on (311)B InP substrates

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